Research On Undoped MOSFET With Adjustable Conductivity Type

In modern society,with the continuous development and progress of science and technology,people have a strong pursuit of high-quality life,and intelligent life has entered all aspects of life.As a basic part of intelligent life,integrated circuit technology also advances towards nanoscale,MOSFET as a basic component unit of the integrated circuit technology,were also put forward higher requirements,we ask for MOSFET should have smaller size,higher level of integration,better electrical performance and achieve more functions.But with the MOSFET size decreases,and all kinds of bad effect will emerge unceasingly,the negative effect of the main is continuously shortening as MOSFET conduction channel,will increase the short channel effect of device,increase power consumption of the device,then the temperature inside the device will increase.As a result,the failure rate of the whole device will increase.In integrated circuit technology,MOSFET is often as switching devices,the threshold swing is the direct factors influencing the device switch performance,tunneling MOSFET and the threshold value of swing to significantly lower than the traditional MOSFET devices,so the tunneling of the MOSFET switch performance significantly superior to conventional MOSFET.In order to further reduce the subthreshold swing,improve the conduction current,and increase the device functionality.In this essay,an undoped MOSFET with adjustable conduction type is proposed.The new MOSFET has a completely symmetrical structure and can be used as a bidirectional switching device because the drain and drain can be exchanged.In terms of conduction characteristics,the new device changes its conduction type by applying different voltages to the floating gate,so that the device can realize free conversion between N-MOSFET and P-MOSFET.The new device also has the advantages of higher conduction current,lower leakage current and lower subthreshold swing.In this study,Dev Edit3 D in Silvaco TCAD software was used to design the structure of the MOSFETr with adjustable conduction type.By setting and modifying the parameters of the device structure,the device structure was optimized.Then,through Deckbuild,the semiconductor simulation model was used.The electrical characteristics of the device are simulated and analyzed to achieve the optimal conduction effect in terms of electrical properties.It provides some new choices for the development of semiconductor devices and IC integrated circuits...