Design Of Miniaturized GaN Internal Matching Power Amplifier

The power amplifier is the core component of the radio frequency transmitting front end,and its performance directly affects the overall performance of the communication system.The third-generation semiconductor device GaN,due to its superior physical characteristics,makes GaN power devices possible to work under high temperature,high pressure,and high frequency conditions,and has great potential for use in the development of microwave power devices.With the development of communication systems in the direction of miniaturization and high power,the requirements for power amplifiers have also increased.According to the requirements of system miniaturization and high power,this article conducts simulation design of L-band RFPA and researches the design of silicon based monolithic GaN internal matching power amplifier.The main work is as follows:1.The theoretical basis and design basis of RF power and the key technology of power amplifier design amplifier design are introduced in detail.Through the electromagnetic extraction and simulation of the silicon-based capacitor and inductor model established in the ADS software,the influence of the physical characteristics of the inductor and capacitor on its electrical characteristics is studied.2.The power amplifier die uses the GaN HEMT developed by Qorvo;the GaN HEMT large-signal model is analyzed for DC characteristics,static operating point selection,stability analysis,and load pulling;Based on the impedence matching points obtained,thr bandwidth utilization of two stage and three stage LC matching circuits is analyzed and studied.AWR software is used for matching circuit simulation design,using 2 stage LC matching network,realize the source and load impedance matching of the power amplifier.Finally,design and manufacture a L-band GaN-based internal matched RF power amplifier.In the matching network,lumped elements are used to realize the capacitance and inductance in the circuit,and gold wires are used for bonding.The actual measurement results show that in the frequency range of 0.9GHz?1,1GHz,the bias is at VG=-2.8V,VD=28V,and in continuous wave(CW)mode,when the input signal Pin=28dBm,Pout>43dBm,PAE>50%;the small signal gain is greater than 17dB within the band.3.Based on passive integration technology and on the basis of research on silicon-based passive components,a power amplifier silicon-based matching circuit is designed,and a quasi-monolithic power amplifier is designed using the co-simulation method.The simulation results show that Using the method of combining matching and filter,a q-MMIC with harmonic suppression effect is designed,Pout is above 43dBm,the PAE is better than 50%.The second harmonic suppressioneffect is obvious.And the size of the designed power amplifier is less than 4.28mm×7.74mm,which realizes the miniaturization of the power amplifier and meets the design specification.The proposed quasi-monolithic power amplifier has similar output power and efficiency to the traditional power amplifier.Compared with traditional external matching,internal matching and MMIC amplifiers,the qMMIC power amplifier based on thin-film IPD technology realizes the miniaturization of the power amplifier while reducing the manufacturing cost,and has better microwave performance and has a wide range of application prospects.