Study Of Radiation Effect On Mosfet And Ring Oscillator At Extremely Low Temperature

With the rapid development of China's aerospace industry,how to ensure the safe and reliable operation of spacecraft in the space environment has become an important issue.Due to the existence of a large number of radiation sources in the space environment,it will cause various radiation effects on the electronic devices in the spacecraft,resulting in the degradation of device performance and even failure.In space,extreme temperature conditions are often accompanied by radiation environment.The electronic devices working in the space environment are usually subject to the test of extremely low temperature and radiation environment,which seriously affects the reliability of electronic devices and the normal operation of spacecraft.In this paper,the MOSFET device and ring oscillator circuit in 28 nm SOI process are taken as the research object.The Total Ionizing Dose experiment of 28 nm SOI MOSFET is carried out by using ?-ray radiation source.The total dose effect of the device in extremely low temperature environment is studied by means of simulation and combined with the experimental data.The Total Ionizing Dose experiment and TCAD software simulation show that the TID will cause the degradation of the electrical parameters of the device,and the switching characteristics and amplification characteristics of the device will be improved under extremely low temperature conditions,so the damage of the device caused by the TID can be improved to a certain extent.The 28 nm SOI process ring oscillator circuit is tested at extremely low temperature and tested at ?-ray radiation source.It is found that the output frequency of the ring oscillator can be increased at extremely low temperature,while the TID leads to the decrease of the output frequency.By using the model parameter extraction software for the data TID under extremely low temperature simulated by MOSFET simulation,the HSPICE model which can be used in the circuit is been extracted.Using this model,the TID of the ring oscillator circuit at extremely low temperature was simulated.It is found that when the ring oscillator circuit is under the combined action of extremely low temperature and radiation environment,the extremely low temperature condition plays a major role in the performance of the circuit,and the extremely low temperature condition can improve the performance degradation caused by the TID.