Application Of High-k Er₂O₃ In Thin Film Transistors

With the rapid development of the Internet era,people have higher requirements for information processing and presentation.The Field Effect Transistor,as the basic functional component of the chip and the display panel,is becoming an important research object.Due to its stable physical and chemical properties and technical advantages for easy synthesis,Metallic Oxide has received extensive attention from the scientific research community and has been applied in many fields.Compared with traditional amorphous silicon FETs,the application of metal oxide semiconductors to FETs is beneficial to the realization of low-cost and high-mobility electronic devices;Compared with traditional oxide silicon FETs,the FET based on the metal oxide insulator perform low power consumption and low leakage with a small thickness.The thin film transistor(TFT),having simple structure and excellent performance,are widely used in the display panel industry.by the low-cost Sol-Gel Method.The high-performance thin-film transistors were prepared in this paper,and were studied.Here are the details.Firstly,the Er₂O₃high k dielectric layer was prepared by sol-gel method.The physical and chemical properties of the thin films were analyzed and applied to In₂O₃thin film transistors.We can effectively control the electrical properties of TFT devices by adjusting the preparation temperature of Er₂O₃.After testing and comparison,it is found that,the best TFT performance is obtained,when the annealing temperature of the Er₂O₃ dielectric layer film is 600?.It was applied to the inverter and shown a good logic function.A thin film transistor with low voltage and low power is realized.Secondly,the doping Er₂O₃ into the SnO₂semiconductor thin film by sol-gel method was adopted to construct the TFT,which could suppress the oxygen vacancy and increase the impurity scattering in SnO₂.After research,it is found that the SnO₂thin film transistor with Er₂O₃doping concentration of 2% has the best performance.An indium free,environmentally and low cost thin film transistor is realized.Finally,an electrolyte-type synapses transistor was constructed based on the 2% Er₂O₃doping SnO₂semiconductor layer and a concentration of 0.1M lithium perchlorate solution.There are a series of synactical behavior were simulated.This study shows the feasibility of low power neural transistors based on SnO₂ semiconductor with sol-gel method,and provides hardware support for the further realization of convolutional neural networks.