Regulation Of The Optical Properties Of Black Phosphorus By Ferroelectric Localized Fields And Preparation Of Metal Oxide LaGaO₃ Thin Films

With the rapid development of semiconductor technology,traditional processes and devices show more and more defects and deficiencies.Therefore,exploring new materials and preparing new structures has become a hot spot in the current semiconductor field.Due to its quantum size effect,two-dimensional materials exhibit many excellent and unique properties in various aspects such as optics,electricity,mechanics,etc.,and have broader application prospects in the field of optoelectronics than traditional three-dimensional materials.Compared with the classic two-dimensional materials of graphene and two-dimensional transition metal chalcogenides,two-dimensional black phosphorus(BP)has high carrier mobility,direct band gap independent of the number of layers,and excellent in-plane each The anisotropic characteristics show good photoelectric properties in practical applications,and have received extensive attention from scientists.Perovskite ABO₃compounds have been extensively studied due to their unique dielectric,piezoelectric,and ferroelectric properties,and have been widely used in modern optics,electronics,energy storage and conversion fields.As a perovskite material with P-type properties,LaGaO₃is also one of the potential materials for preparing P-type metal oxide thin film transistors.LiNbO₃is a ferroelectric metal oxide material with a perovskite structure.It is also a widely known use in optical waveguides and light modulators,and has a wide range of applications in the field of optoelectronics.In this paper,we propose to integrate the perovskite ferroelectric film LiNbO₃(LN)with the multilayer black phosphorous film(BP).The results show that the strong local electric field generated by LN can effectively control the multilayer through the Stark effect.The mid-infrared emission peak of BP film extends to the longer infrared band,and proves that the ferroelectric domain of LN can significantly suppress its photoluminescence(PL)intensity at the same time.This work has realized for the first time that it can directly modulate the mid-infrared luminescence of black phosphor without an external electric field.In addition,metal oxide semiconductor thin film transistors(TFTs)based on the perovskite structure are widely used in semiconductor display devices.So far,in the research of TFT,due to the lack of suitable P-type materials and its harsh preparation conditions,Making the development of P-type metal oxide TFT stagnant.We also prepared a perovskite-structured metal oxide LaGaO₃film by a sol-gel method,and integrated a P-type perovskite LaGaO₃device,which confirmed the possibility of the film's application in transparent electrons.