Study On Transport Characteristics Of Memory Devices Based On New Magnetic Materials

Various materials,such as two-dimensional nano materials,transition metal compounds,etc.,their electronic structure characteristics determine their application prospects.Based on the first principles,the electronic structures of some materials and the electrical characteristics of their devices are calculated and analyzed(1)Based on the first principles,the electronic structures of several materials,including band and density of States,are simulated by VASP software,and the relationship between band structure and Fermi level is analyzed.The smallest band gap is Sb2Te3,which is only 0.16 ev,which is more conducive to electron conduction.The three Bi materials are all three-dimensional topological insulators with only one Dirac cone.Bi2se3,Bi2Te3 and Sb2Te3 have the characteristics of direct band gap semiconductors.In addition,the surface state of Sb2Te3 has a strong ability to resist external interference,even if there are some defects,impurities and other factors in the system,the surface state can be maintained very well.(2)Based on the LLG model,the dynamic characteristics of Co Fe B / Bi2Te3 heterostructure were studied by using OOMMF software.By analyzing the distribution of magnetic moment,it is found that the flip speed and energy consumption of the vertical magnetic tunnel junction will be significantly improved when the spin orbit sot write pulse current is added.(3)Furthermore,the influence of anisotropy constant on the distribution of magnetic moment and the reversal characteristics of magnetic materials is investigated.The results show that when the anisotropy constant is large,the amplitude of the vertical magnetic moment component decreases rapidly.In addition,by changing the write pulse current of Sot,the amplitude and duration of write pulse current threshold in STT can be adjusted,and the power consumption can be further reduced.