Research On Key Technologies Of Amplifiers Used In CMOS Multifunctional Transceiver Chips

In recent years,with the widespread application of phased array technology in military radars and wireless communication systems,multifunctional transceiver chips,as the core components of phased array systems,have received much attention.The multifunction transceiver chip is mainly used for up and down conversion,amplitude and phase control,and signal transmission and reception.Previously,most of the multi-function chips were manufactured using the Ga As process.But,the feature size of the siliconbased process gradually shrinks now.Since the silicon-based process is easy to be compatible with digital chips and costs less,it gradually draws attention.In recent years,more and more researcher are committed to achieving the goals of high integration and low power consumption of multi-function transceiver chips using silicon-based technology.As a key part of the multifunctional transceiver chip,the silicon-based amplifier has the shortcomings of low breakdown voltage,large parasitic effects,and poor high-frequency performance.In order to solve the above problems,it is urgent to propose a new circuit structure to improve the performance of the silicon-based amplifier.The new structure should be high integration.Also,it will achieve excellent circuit performance such as low noise,high gain and high output power.Therefore,this article designs three amplifiers based on the SMIC 55 nm CMOS process,all of which are used in multi-function transceiver chips.The main work is in the following:1.A Ka-band driver amplifier is designed.To solve the problem of transistor gain roll-off due to high frequency band,a transistor stacking technology is proposed,which uses a two-stage Cascode structure cascade to achieve flat gain and good standing wave.To solve the problem that the transconductance of the transistor changes greatly with temperature,a temperature compensation technique is proposed.The PTAT voltage generating circuit is used as the bias circuit to reduce the fluctuation of the gain with the temperature change.The test result shows that the gain in the 32GHz～38GHz frequency band is greater than 16 dB,and the output 1dB compression point is 11 dBm.2.A Ka-band power amplifier is designed.To solve the problem of limited output power of a single transistor in silicon-based technology,a differential power synthesis technology is proposed,which is realized by using the balun structure.And the balun is involved in the design of matching circuit to save area.In order to reduce the influence of the Miller effect on the power amplifier,a neutralizing capacitor technology is proposed,which improves the stability and gain of the overall power amplifier.In order to further improve the efficiency of the power amplifier,LC resonant network is added to the balun to realize the inverse class F terminal harmonic impedance.The simulation result shows that the small signal gain in the 32GHz～38GHz band is greater than 25 dB,the output P1 dB at the center frequency of 35 GHz is 16.6dBm,the peak power added efficiency is greater than 20%,and the output P1 dB in the required frequency band is greater than 15.5dBm.3.A 3～18GHz ultra-wideband amplifier is designed.To realize wider frequency band,a broadband matching technology is proposed,which uses peak inductance structure and RC negative feedback structure.And the current reusing technology is used to reduce power consumption.Source inductance negative feedback technology was used for input matching and adapting the noise figure of the amplifier.The test result shows that the gain is greater than 16 dB in the 3～18GHz band,and OP1 dB is about 7.8dBm at10 GHz.