Design And Implementation Of High Responsiveness And High Reliability Four-Quadrant Detector

Silicon-based four quadrant photoelectric detector in the laser guidance,The silicon-based four-quadrant detector is the main research object,along with the application requirements,requirements of laser-guided weapons have further guidance distance and higher precision,the four quadrant photoelectric detector technical indicators are also put forward higher requirements,especially in the sensitivity of the near infrared wave band,response speed,spectral crosstalk,reliability requirements and other indicators.This thesis is aiming at these problems,based on silicon-based four quadrant detector,as the main object of study,after thorough analysis device performance requirements,the silicon-based four quadrant detector sensitivity and response speed,spectral crosstalk index to carry on the design and implementation.Breakthrough the following key technologies:1.Black silicon response enhancement technique,the traditional configuration near infrared silicon photoelectric detector response rate and response spectr?m can meet project requirement.In order to solve this problem,this thesis adopts the black silicon technology,near infrared response rate of the device can be increased to 0.5 A/W@1064nm above,response wavelength range reaches more than 1200 nm.By optimizing the black silicon forming process,doping process and annealing process,this thesis reduces the carrier recombination,enhances the near-infrared response of the device,and extends the response wavelength range.2.With the multi-component composite suppression technology of pixel crosstalk,due to the small absorption coefficient of silicon material to near-infrared light,the absorption layer of near-infrared response enhancement device is thick,and due to the weak electric field at pixel edge,it is easy to cause the photogenerated charge carriers at pixel edge to diffuse into neighboring pixels,resulting in crosstalk and degradation of device performance.Three structures of physical isolation groove,cut-off ring and transmission grating are used to achieve composite suppression of pixel crosstalk from physical,electrical and optical levels respectively.The advantages and disadvantages of these three methods are complementary,which can greatly reduce the pixel crosstalk of devices.3.Device packaging technology,device for silicon detector of chips,metal shell,bonding wire.Using conductive adhesive detector chip bonding on TO8 shell,reduction under high temperature,good contact,using gold detector chip electrode connected to the shell pin,recycling energy storage welding on the glass window of light tube cap and base air-tightness encapsulation,ensure that components of air tightness and so on.On the basis of the above research,a four-quadrant photodetector sample is developed,four quadrant photodetector samples are developed.With infrared response enhancement function,the near-infrared response rate reaches 0.50A/W@1064nm,the response wavelength range is extended to 1200 nm,the pixel crosstalk is less than2%,and the response time is less than 10 ns,which has been verified by typical simulation environment tests.