Research On Bionic Characteristics And Physical Switching Mechanism Of Stacked Memristor

In nano devices,memristor has been widely used in resistive memory and synaptic bionics due to its unique nonlinear electrical properties,which has attracted a lot of research interests.Among them,bio-memristor has attracted more and more attention because of its simple structure,fast switching speed,environment-friendly,low power consumption,etc.The rapid development of two-dimensional materials in the application of electronic devices also prompted researchers to successfully apply two-dimensional materials in memristor.However,in practical applications,the above two types of memristors have the problem of instability,that is,the distribution of threshold switching voltage is dispersing,which will weaken the performance of memristors.So we try to use new materials to replace the middle layer structure to make our devices more stable.Therefore,in this paper,the biomaterial bovine serum albumin doped with nanosilver(BSA-Ag)and two-dimensional material SnSe₂ are used to fabricate memristors with different structures,focusing on improving the dispersion of switching parameters,and exploring the bionic characteristics and physical mechanism of memristor:1?The traditional Ag/BSA-Ag/Pt structure memristor with single interlayer and the laminated Ag/BSA-Ag/Zr O₂/Pt structure memristor with oxide layer Zr O₂ are fabricated,and tests the I-V characteristics of these two devices.It is found that the devices with these two structures have resistive switching electrical properties.Compared with the traditional devices,the devices with Zr O₂ show better stability,such as better switching voltage threshold,better retention characteristics,lower switching speed,and better peak time dependent plasticity.In addition,we also made flexible devices with Ag/BSA-Ag/Zr O₂/Pd/PDMS structure with flexible substrate Polydimethylsiloxane(PDMS).It is found that the devices have good electrical properties after 500 folds,and the device dissolves after immersion in deionized water for 36 hours,showing biological solubility.Finally,we also explore the reason for the improvement of the performance.We think that the randomness of the growth and fracture of the conductive wire will lead to the dispersion of the switching voltage,thus weakening the performance of the memristor.The addition of oxides limits the fracture/recovery of the conductive wire in the double-layer interface region.2?Ag/SnSe₂/Pt devices and Ag/SnSe₂/Zr O₂/Pt devices with oxide Zr O₂ in the middle layer were fabricated by using two-dimensional material SnSe₂,which is widely used in the field of optoelectronic devices,we compare the two kinds of structure devices,respectively test the electrical properties of the devices and calculate their switching power consumption.It is found that the devices with oxide insertion not only improve the electrical properties,but also reduce the switching power consumption compared with the devices without oxide,which has the advantage of low power consumption.3?We use Ta as the top electrode,SnSe₂ and HZO as the middle layer to fabricate the Ta/SnSe₂/HZO/Pt structure memristor.The results show that the device has a slowly varying I-V characteristics and can achieve bidirectional conductance regulation.We also test the I-V characteristics of the device under the current limiting of 0.15 m A,0.1 m A and 0.07 m A,respectively.