| Memristor is the fourth basic electronic component proposed by L.O.Chua.Its resistance can be changed according to the amount of charge flowing through it.Due to its unique performance,the research on it has been extended too many aspects.The memory resistor has become one of the possible options for the next generation memory because of its advantages such as simple structure,fast speed,low power consumption,compatibility of manufacturing process with existing VLSI chip production process.However,in the process of industrialization,there are many obstacles,among which low power consumption and small size problems pose new challenges to functional layer materials.Therefore,the development of new devices with stable performance will promote the future development of storage.Another mememonic is the use of bionic research in areas such as pain perception,memory,forgetting,and synaptic plasticity.In addition,the memory barrier can realize the synaptic plasticity of the organism,and it is applied to the key research fields such as neural network and artificial intelligence,but it still needs to develop new neural synaptic functions.In view of the existing problems,this paper mainly carries on three researches:Firstly,the device with an Ag/SiC/Pt structure was prepared by wide band gap semiconductor SiC.By adjusting different limiting current,the threshold and bipolar resistance switch characteristics are realized.Under the threshold characteristics and the switching characteristics of bipolar resistance,they have lower power consumption.The two characteristics can be used to simulate the characteristics of biological pain and synapses.At a small limited current(10-5A),the device presents threshold characteristics,and the simulation of the biological pain sensor is realized.The pain sensor realizes three characteristics of"threshold","inadaptation"and"relaxation"by adjusting the pulse signal,which is the most important feature of biological pain.Then by increasing the limiting current value(10-3 A),the device realizes the bipolar resistance switches characteristics,which has good stability and fast response speed.Different pulse signals gradually regulate the resistance state to achieve complete synaptic function(including Spiking-timing-dependent-plasticity,Short-term Memory to Long-term Memory,and Paired-pulse facilitation).All these functions are due to the formation and fracture of silver conductive filaments in SiC films.This work proves the great potential of SiC materials in the next generation of chip system electronic devices.Secondly,the high quality 2D-BiOBr films were prepared by hydrothermal method,and then introduced into Ag/2D-BiOBr/Pt memory to prepare nano-sized memory resistors.The experimental results show that the conductance of the memristor can be regulated by changing the parameters of the stimulus pulse and the synaptic function of the organism can be simulated.The exciting postsynaptic current of the device is obtained by applying a voltage pulse.The mechanism of resistance of Ag/2D-BiOBr/Pt memory device is explored.The proposed Ag/2D-BiOBr/Pt device based on 2D-BiOBr material provides a possibility for the progress of artificial synaptic bionic function,and provides a basis for further research in this field.Thirdly,in order to optimize the resistance performance of the device,the dual layer hybrid structure of SiC and two-dimensional biobr materials is used as the functional layer of the device.The durability and parameter uniformity of SiC-based memory devices are improved further by embedding 2D-BiOBr into their structure.The switch voltage distribution,response speed and high resistance ratio of Ag/SiC/Pt and Ag/SiC/2D-BiOBr/Pt devices are studied.The mechanism of Ag filament produced by Ag/SiC/2D-BiOBr/Pt device during the conduction process is studied in detail.This study provides a simple technique to improve the performance of SiC memory,and shows the great potential of 2D-BiOBr in the field of neural morphological devices and neural networks. |
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