Characteristics And Mechanism Of Memristor Based On Titanium Oxide And Wool Keratin

With the advent of 5G era,the complexity of computing tasks and the diversification of application scenarios make the computer more demanding in density and power consumption.Therefore,it is urgent to explore a new solution to solve the bottleneck of data transmission.Memristor has attracted attention because it can integrate storage and computing into a unit,and has advantages in high efficiency and hardware development cost.However,the development of memristor also faces many challenges.Firstly,with the development of simple oxide research,researchers began to choose two-dimensional metal oxide materials with better performance.In the future,one of the research directions of memristor is to manufacture humanoid robot,and the emphasis is to break through the mimic of human sensory system.However,the bionic function of the memristor has been realized is still at the basic level,which can not meet the needs of future research.On the other hand,natural protein has attracted more and more attention due to its biocompatibility,high flexibility and light weight.Moreover,compared with inorganic memristor,the bio memristor is more suitable for wearable devices.Therefore,in view of the above two problems,this paper studies the memristor of two-dimensional oxide materials and organic wool keratin materials.The details are as follows:??The device was prepared by using the two-dimensional TiO₂ nanosheets with excellent performance.Firstly,the morphology of TiO₂ nanofilms was obtained by various micro characterization methods.After the stable voltage and pulse characteristics of the device are verified,the device can mimic the synaptic function,and the device has good non-volatile characteristics.In this thesis,a pulse scheme is proposed to verify the behavior of the nociceptor.In the application of this scheme,the device successfully mimicked the pain sensitivity,desensitization,allodynia and hyperalgesia of human nociceptor.In order to reflect the mechanism of the device more accurately,the I-V characteristics of the device are analyzed by different conductive mechanisms.It is found that the high resistance and low resistance of the device are more in line with the hopping mechanism according to the"determination coefficient"of different fitting results.The realization of the artificial nociceptor provides an example for the preparation of multifunctional memristor.??The flexible device of Ag/Wool Keratin/ITO/PEN was prepared by using wool keratin.The UV irradiation(UV)method was used to make the protein cross-linking,which improved the structure stability of wool keratin.The electrical properties and conduction mechanism of the UV treated and untreated devices are compared and found that the electrical properties of the devices can be improved through UV treatment.In addition,the flexible device has strong mechanical resistance and can withstand bending radius of up to1.2 mm.The flexible device can mimic typical memory characteristics and synaptic function.The mimic results show that the memory network based on the crosslinked wool keratin film has 95.8%memory learning accuracy and pattern learning ability.By analyzing the physical mechanism of the device,it can be found that the switching behavior of the device is caused by the migration of Ag ions.This kind of cross-linked wool keratin device has potential application in wearable and flexible neural computing system.