Large Signal RF Equivalent Circuit Modeling Of GaN HEMT Based On Physics

Since the development of wireless communication,its development speed has increased exponentially,and with the advent of the 5G era,people's requirements for wireless communication systems have become higher and higher.Due to the material properties of the first two generations of semiconductors,their development space for applications such as high temperature,high power,and high frequency has been limited,and their material performance limits have been approached,and they have been unable to meet the needs of wireless communication systems.Gallium Nitride(Ga N)High Electron Mobility Transistor(HEMT),as a third-generation semiconductor material,has unique advantages in high-frequency and high-power environments due to its operating frequency,electron mobility,and band gap.Ga N HEMT devices It is the research hotspot of semiconductor devices at home and abroad in recent years.The large-signal physical characteristics analysis and large-signal modeling of the device are the core content of the research.The nonlinear volt-ampere characteristic model is used to accurately characterize the physical characteristics of the Ga N HEMT device.The rapid and accurate extraction of model parameters can improve the efficiency of large-signal modeling.Aiming at device physical characteristic modeling and large-signal model parameter extraction,the research content of this paper is as follows:First of all,according to the working principle and physical characteristics of Ga N devices,the accurate extraction of the parameters of the small-signal equivalent circuit model is the basis for studying the large-signal model of Ga N HEMT.This paper establishes the small-signal equivalent circuit based on the measured Z parameter matrix of the Ga N HEMT device.Model,extract the intrinsic and parasitic parameters of the model.Secondly,since the physical characteristics(self-heating effect,trap effect)and nonlinear capacitance of Ga N HEMT devices are the main factors affecting their performance,the effect on the device is embedded in the physical-based model through modeling analysis;according to the surface potential of the device,A nonlinear drain-source current model reflecting the device performance is deduced,and a large-signal compact physical model of the Ga N HEMT device is constructed based on the extracted small-signal model parameters,physical characteristics model,and nonlinear drain-source current model.The model has clear physical meaning Accurately characterize device characteristics and guide device circuit design.Finally,the built large-signal model is embedded in the simulation software ADS2016 by means of symbolic definition of the device.Through the comparison of the simulation data and the measured data,it is verified that the built Ga N HEMT large-signal model has high accuracy and strong practicality.