| With the arrival of the information age,internet and machine learning bring a lot of information,which puts forward higher requirements for the size and power of electronic product information storage units.However,with the development of Moore's law,the miniaturization of devices has reached the physical limit.Reducing to smaller size not only poses a great challenge to the process,but also is limited by the properties of silicon materials themselves.How to break the limit of device size and realize the reform,application and development of semiconductor optoelectronic devices is a difficult problem to be solved.With the rise of two-dimensional materials,the Van der Waals structure constructed by two-dimensional ultra-thin materials has provide a new strategy to solve this problem.In this paper,a kind of non-volatile memory with WSe2 as channel material,graphene as floating gate layer and hexagonal boron nitride as tunneling layer is discussed in this paper.The main resulters of this thesis are as follows:(1)The properties of WSe2,as channel materials affect the properties of floating gate non-volatile memory.Therefore,the electrical properties of WSe2 and WSe2homojunctions are briefly discussed.The WSe2 is strong P type and weak N type material,and due to the influence of WSe2 layer thickness,the homojunctions has a rectifying ratio of up to 10~3.(2)The WSe2/h-BN/Graphene/h-BN floating gate non-volatile memory is fabricated by mechanical exfoliation and PVA transfer method.The thickness of two-dimensional material is determined by AFM,and the material characterization of two-dimensional material is confirmed by Raman spectroscopy.(3)The WSe2/h-BN/Graphene/h-BN device shows the ON/OFF ratio up to 10~6,hysteretic window of more than 80 V and has good retention characteristics.Compared with the non-volatile memory of the WSe2/h-BN/Graphene floating gate,the role of bottom h-BN has proven the leakage of the gate current reduction. |
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