Research On SiC MOSFET Bond Wire Failure Modeling And Condition Monitoring

As a key device in the third generation of semiconductor products,silicon carbide Metal-Oxide-Semiconductor Field-Effect Transistor(Si C MOSFETs)play a vital role in more and more fields.With the increasing power of Si C MOSFETs and more and more application fields,the failure of Si C MOSFET modules needs urgent attention.At present,power module packaging is mainly divided into welding type and crimping type,among which welding type is widely used.Welding requires the use of bonding wires for electrical connection,so the reliability of the bonding wires is particularly important.Firstly,the superiority of the SiC MOSFET module is analyzed and the future of the device is prospected,and the reason for the failure of the power module is discussed.Understand the static and dynamic characteristics of Si C MOSFETs and the package structure of the module,and discuss the necessity of Si C MOSFET module monitoring.The multi-physics finite element simulation software COMSOL was used to establish a three-dimensional model of the Si C MOSFET module.Through the electro-thermal-stress coupling,the effects of different numbers of bond wires falling at different positions on the temperature distribution of the Si C MOSFET module and the temperature change were studied.At the same time,the change of the remaining bond wire stress is analyzed;then a method for monitoring the health of the bond wire based on the on-resistance of the module is proposed,which can measure the module bond wire without opening the module package.Monitoring of health status.In order to verify the effectiveness of the proposed method,the actual bond wire breaks were simulated by cutting different numbers of bond wires,and the module on-resistance of the bond wires in different health states was measured.At the same time,the temperature and on-current were normalized.Chemical treatment eliminates the influence of temperature on the measurement results.