Study On Energy-level-Divergence Effect And Related Optoelectronic Devices

Since the concept of energy level dispersion and the fractional-dimensionality electron-states architecture theory were proposed in 2012,further experimental verification of energy level dispersion effect and the application of the fractional-dimensionality electron-states architecture theory in related optoelectronic devices have been put on the agenda.On the one hand,as a kind of light source with high power and wide spectrum characteristics between laser and light-emitting diode,superluminescent diode(SLD)is one of the typical optoelectronic devices that can best reflect the energy level dispersion and the characteristics of fractional-dimensionality electron-states architecture.Therefore,it is of great scientific significance to explore the authenticity of the energy level dispersion by combining the properties of typical fractional dimension SLD,to further improve theory of fractional-dimensionality electron-states architecture,and to further enrich and develop solid state/semiconductor physics.On the other hand,SLD has a wide range of applications in optical coherence tomography,optical time domain reflectometer and fiber optic gyroscope,and these applications have an urgent need to further improve the comprehensive performance of devices.Therefore,it is of great application value to apply theory of fractional-dimensionality electron-states architecture to the performance optimization of SLD,and to improve the comprehensive performance of devices effectively by adopting new technical routes.This paper is based on the theory of energy level dispersion,and based on the National Natural Science Foundation project "Theoretical and Experimental Research on Energy-Level Dispersion in the Electronic State of Crystals and Fractional Dimensional Effects"(Project Number:61674020)and based on international cooperation projects of the Ministry of Science and Technology.SLD is chosen as a typical application example of theory of fractional-dimensionality electron-states architecture,and it is devoted to the construction of related theoretical model,the exploration of the authenticity of energy level dispersion and the optimization of integrated device performance.It needs to be noted that due to the exploratory nature of this research work,the establishment of the above theoretical model has gone through arduous and tortuous attempts and corrections,and fortunately,a relatively satisfactory progress has been made in the end.the main research achievements and innovation points are as follows:(1)In this paper,an analytical model of superluminescent diode(SLD)performance based on the theory of fractional-dimensionality of electron-states architectures is established.The output power,3dB bandwidth of power spectrum and ripple coefficient of the SLD featuring a fractional-dimensionality active region with the dimensionality between the ideal two-dimensional one and the ideal three-dimensional one are analyzed comprehensively.In the simulation calculation,taking GaAs material system semiconductor heterostructure under 300K operating temperature as an example,the symmetric linetype energy-level-divergence function is adopted and the energy-level-divergence linewidth is set as 0.00221eV.The theoretical calculation and the experimental results indicate that the effect of the energy-level divergence have to be considered in this kind of analyses,which proves that the energy-level-divergence effect does exist in the semiconductor materials.Meanwhile,it is also found that the ripple coefficient plays a decisive role of restriction to the device performance optimization,so the necessity to adopt appropriate chirping quantum well or just thin well active-region structures for improving the device performance is confirmed.This work deepens the understanding of the device physics of SLD and the semiconductor band structures and is of essential significance for the optimization design of SLD devices.(2)On the basis of the previous work,the idea of further verifying the validity and completeness of the fractional dimension SLD theoretical model is proposed,and the design scheme of the active region and the waveguide structure of the single quantum well SLD related to the verification work is given.It should be noted that due to the epidemic situation and the difficulties encountered in the updating of experimental equipment in our laboratory,the device preparation and testing work could not be carried out as scheduled,and could only be left to the next step.