Structure Design And Fabrication Of The 1 550nm Superluminescent Diode

The luminescence characteristic of the superluminescent diode is between the light emitting diode and the laser diode,and its unique performance makes it popular in the field of fiber optic gyroscope and other fields.The active region of quantum well of the 1 550nm superluminescent diode was made of Al_0.12Ga_0.12In_0.76As four element compound material in this paper.The relationship of the quantum well width and the center wavelength was calculated according to the strain compensation theory and the eigen equation of the finite deep well function,and finally,the same components and different quantum well width three quantum well structures were adopted.Three methods are used to suppress the lasing by using the incline strip current injection zone,the non-injection absorption region which set in the non-ejection end prepared by using electrochemical corrosion method and Steamed high permeability film in the ejection end.The key processes such as lithography,ridged mesa,ohmic contact and thinning and polishing are studied.The luminescent characteristic of the fabricated device is tested.When the injection current is 325mA,the output power of the device fabricated by dry etching is25.6mW at the central wavelength of 1 552.13nm,its full width at half maximum is greater than 44nm and the modulation depth of the spectrum is smaller than 5%.