Research On Ontoelectronic Properties Regulation And Metamaterials Of PtS₂

Due to its excellent physical properties,two-dimensional materials are another semiconductor material with a wide range of applications after silicon.As the foundation of the information industry,semiconductor materials are the foundation of optoelectronic components and solar energy industries.The emergence of semiconductor materials has far-reaching significance in promoting the progress of my country’s industry,national defense and other fields.The typical representative of two-dimensional materials-transition metal chalcogenides（TMDs）,which have van der Waals force combined layered structure and excellent optical,electrical,magnetic and other properties,make up for the shortcomings of graphene and greatly broaden the practical application of semiconductor materials.With the rapid development of science and technology,more and more new semiconductor materials are needed to meet the needs of people’s life.Under this background,this paper mainly focuses on the controllable preparation,photoelectric characteristics control and PtS₂ related metamaterial characteristics of the few layer PtS₂ materials.1.A few layer PtS₂ material was prepared.By combining physical vapor deposition（PVD）with chemical vapor deposition（CVD）,PtS₂ with different thickness was prepared by controlling deposition temperature,pressure and curing rate.The homogeneity and quality of PtS₂ were confirmed by Raman spectroscopy,polarized Raman spectroscopy,photoluminescence spectroscopy,atomic force microscopy,scanning electron microscopy,high resolution transmission electron microscopy and X-ray photoelectron spectroscopy.The density function theory（DFT）was used to analyze the properties of PtS₂ The band gap,band type and work function of PtS₂ with different layers are simulated.In addition,field effect transistors and optoelectronic devices are constructed based on PtS₂ semiconductor materials,and the device performance parameters such as carrier mobility,switching ratio and photocurrent of field effect transistors and optoelectronic devices are explored respectively.Finally,oxygen plasma was used to treat the few layer PtS₂ material to explore the Raman spectrum changes before and after treatment.2.The optical meta-structure materials based on PtS₂ were prepared.A low-cost and simple nanosphere lithography（NSL）technology was used to prepare PtS₂ metamaterial.The single-layer self-assembled polystyrene microspheres were obtained by spin coating method and used as the microstructure template.By adjusting the particle size of polystyrene microspheres,different sizes of microstructural units were obtained.AFM and SEM proved the existence of PtS₂ with metastructure.The optical properties of PtS₂were characterized by ARM,and the optical properties were modulated by different sizes of microstructure PtS₂.In addition,the optical properties of PtS₂ can be changed at different light angles,which indicates that PtS₂ has the ability of optical anisotropy.3.The composite structure of Pt/PtS₂ and black silicon（B-Si）was prepared.Metal assisted chemical etching（MACE）was used to etch the surface of silicon substrate to form nanoscale microstructure.Pt/PtS₂ was combined by PVD and CVD to achieve excellent optical properties.The effects of temperature,time and the composite structure of Pt/PtS₂ and black silicon（B-Si）on the surface morphology and optical properties of black silicon were investigated.SEM and AFM were used to characterize the surface microstructure of black silicon.It is proved that black silicon has Raman signal enhancement characteristics by Raman characterization.The absorption characteristics of black silicon and Pt/PtS₂ and black silicon（B-Si）composite structure under different experimental conditions are studied by visible light absorption spectrometer.The results show that Pt/PtS₂ composite and experimental conditions have a key influence on the absorption characteristics.