Electrical Properties Of FET And Heterostructure Prepared By Two Dimensional Transition Metal Dichalcogenides And Black Phosphorus

The characteristics of two dimensional?2D?transition metal dichalcogenides?TMDCs?and phosphorous?BP?as well as their devices are hot topics in the field of semiconductor.Because of their excellent physical and chemical properties,two dimensional materials have been widely used in different fields,such as optoelectronics,chemical sensors,hybrid materials.In order to explore various physical parameters and transport properties of 2D devices,here,a variety of 2D TMDCs and BP field effect transistors?FET?and their heterostructures have been successfully prepared by dry transfer technology.The different factors affecting the performance of the devices are systematically analyzed.The main work can be summarized as follows.The preparation methods of 2D materials and devices are described in detail.The advantages and disadvantages of dry and wet transfer techniques are compared.In order to achieve the minimum damage of material in transfer process,the different conditions required for the transfer of different materials during the preparation of the device by the dry transfer technique are explored.The advantages and disadvantages of the method for preparing the device electrodes of the EBL electrode,the graphite electrode,and the gold membrane electrode are compared.It is concluded that gold label electrode can minimize the electrode preparation process?eg,EBL?,than could reduce the damage for materials during the preparation of the electrode.The relationship between the various factors and the electrical transport characteristics of different kinds of 2D TMDCs-FETs and BP-FET are systematically measured and analyzed.The effects of the thickness on the band-gap adjustment of materials,the influence of temperature on the transport characteristics of the device,the relationship between the adsorption of water and oxygen in the air and the carrier type of material,and the influence of light on the two-dimensional material are systematically studied.Based on the Schottky junction current equation,the function F??V?is constructed.Contact resistance and barrier height are obtained by voltage derivation of function F??V?.Series resistance and ideal factor are obtained by current derivative of function F??V?.This method was used to analyze the MoS₂/BP heterostructure pn junction prepared by dry transfer.The advantages and disadvantages of the voltage derivative method and current derivative method are discussed.In this paper,different kinds of 2D-FET and MoS2/BP heterojunction devices were prepared by dry transfer technology.The effects of different factors on the devices performance are systematically studied.The results obtained in the experiment will provide guidance for the preparation of high performance,high stability 2D-FET and heterojunction devices,which in turn will promote the application of two dimensional material devices.