| To exploit the potential of a new generation of computers and sensors,new semiconductor materials are urgently needed.Semiconductive transition metal dichalcogenides(TMDs)have been considered as next generation semiconductors,Pd S2,a group-10 noble transition metal dichalcogenides(n TMDs),has prominent layer-depended band structure,and it can enable extremely high phonon limited mobility at room temperature.We've overcome the disadvantage of most device investigations are still based on microscale exfoliation with a low yield,and demonstrate the experimental realization of large-area synthesis of few-layer Pd S2 films by direct sulfurization of pre-deposited Pd.A series of Characterizations including Raman spectroscopy,atomic force microscopy(AFM),conductive atomic force microscopy(CAFM),Energy Dispersive Spectrometer(EDS)and X-ray photoelectron spectroscopy(XPS)have indicated that good film stoichiometry and uniformity have been achieved.Further,the work function and potential difference of the Pd S2 on the Si O2/Si substrate were measured by Kelvin probe force microscopy(KPFM).Moreover,the results of characterization are verified by First-principles calculations were performed based on density functional theory(DFT).The temperature-dependent Raman spectra of few-layer Pd S2 films prepared by PE-CVD in the range of 300-12 K were reported and analyzed for the first time.The linear temperature coefficients of the in-plane Eg and the out-of-plane Ag modes for both suspended and substrate-supported Pd S2 were measured.We studied angle-resolved polarized Raman spectrum using a polarizer rotation method.Our findings provide a promising alternative for designing novel polarization optics based on 2D anisotropic materials,combining the fundamental temperature-dependent vibrational information of Pd S2,which can be easily integrated in micro-sized Pd S2-based electronic and optoelectronic devices.To further establish feasible application based on Pd S2,the field-effect transistor(FET)was fabricated based on Pd S2 films for electrical transfer and output curves capacitance measurement.In particular,Pd S2 films display a high carrier mobility of?388 cm~2V-1s-1and an on–off ratio of 800,these results validate that Pd S2 is a promising candidate among the family of TMDs for future functional electronic applications.On this basis,in order to develop Pd S2 material application,we was prepared by direct sintering Pd S2/PTCDA heterojunction,organic/inorganic semiconductor heterojunction vertical combination of two kinds of peculiar properties,combined with the advantages of the two materials,in order to future miniature photoelectric detector and microelectronics have certain guiding significance to the development of flexible devices. |
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