Fabrication And Characterization Of A Floating-gate Layered Active Layer Flexible Biomemristor

With the continuous development of science and technology,higher requirements were put forward for the storage density,storage speed,stability,power consumption and mechanical flexibility of memory.Memristor was usually a sandwich structure of metal/insulator/metal,which could store information by applying electrical signal to change the resistance state of the device.Biomaterials were typically eco-friendly and degradable,and had broad prospects in implantable,biocompatible,wearable and green electronic devices.In this paper,the main materials of memristor dielectric layer were scindapsus aureus,silkworm hemolymph,starch,soy protein a.By embedding graphene quantum dots with charge trapping characteristics in the dielectric layer,the switching current ratio of the device was improved,and the floating gate structure was adopted to improve the switching stability of the device,so as to reduce the set voltage and power consumption of the device.The switching current ratios of Al/PMMA/Biomaterial:GQDs/PMMA/ITO/PET floating gate active layer flexible biomemristor based on the materials of scindapsus aureus,silkworm hemolymph,starch and soybean protein were 9.86×10~2,1.05×10~6,9.71×10~2 and 7.35×10~6,respectively.The holding time were more than 10~4s,and the devices still had stable bipolar resistance switching characteristics in bending state.