Establishment And Verification Of Small Signal Model And Noise Model For AlGaN/GaN HEMT Devices

With the rapid development of commercial wireless communication system and military radar system,modern electronic equipment is getting higher and higher demands on the frequency,power and low noise margin and other indicators of the microwave power transistor,the traditional semiconductor materials,such as gallium arsenide(Ga As),due to some of their own limitations,the devices made of gallium arsenide has been unable to meet the needs of technological development.The third generation of the semiconductor materials,such as gallium nitride(Ga N),has the advantages of high electron mobility,high breakdown voltage,wider forbidden band,high electron saturation rate and good stability,and has become a semiconductor device research hotspots.Compared to silicon carbide(Si C)devices,gallium nitride(Ga N)power devices have better high-frequency performance and higher power quality factor,making gallium nitride in the application of high-frequency and high power has a broader develope prospects.However,due to the high frequency characteristics and the self-heating effect of Ga N HEMT,the traditional FET model can not fully express its characteristics,so it is very important to establish an accurate Ga N HEMT model.Only under the premise of the establishment of a more accurate device model,we can better use the device to the circuit design,speed up the circuit design process,improve the design circuit design success rate.This paper of the Al Ga N/Ga N HEMT device is to establish and validate the small signal and noise model of Al Ga N / Ga N HEMT device.The main contents of the study include:1)The research of the method and modeling process of the small signal modeling,the technology of the extraction and analysis of the parameters of parasitic elements and intrinsic components of Al Ga N/Ga N HEMT device.2)Test the actual Al GaN/GaN HEMT devices S parameters under Vgs=-4V,Vds=0V?Vgs=0V,Vds=0V and Vgs=28V,Vds=-2.5V by using self-designed test fixture.3)Extract the parameters of the parasitic elements and the intrinsic components,then fit the small signal model of Al Ga N/Ga N HEMT device,verify the coincidence degree of simulation and test S parameter,verify the accuracy of the method.establish the small signal equivalent circuit model.4)Build the appropriate model based on S parameter and small signal model Al GaN/Ga N HEMT noise model.