Study On The Electrical Properties Of InGaAs/GaAs/InGaP Quantum Well Lasers

Quantum computers can quickly implement parallel operations,and their data processing speed far exceeds that of electronic computers.However,quantum computers can only operate in a low temperature environment,so data transmission between low temperature and room temperature and maintaining a low temperature environment inside quantum computers have become a focus of quantum computer research.Since semiconductor lasers have outstanding advantages in terms of working stability,energy consumption,and working temperature range,they have become a breakthrough point in solving the above problems.Therefore,the development of a semiconductor laser suitable for quantum computers has become an important direction of semiconductor laser research today.This thesis studies the electrical characteristics of In Ga As/Ga As/In Ga P quantum well lasers,Ga Sb-based quantum well lasers and the modulation characteristics of In Ga As/Ga As/In Ga P quantum well lasers.The main contents are as follows.1.The thesis introduces the development status of semiconductor lasers(focusing on the development status of In Ga As/Ga As/In Ga P 980nm lasers)and working principles.It also introduces the preparation methods of semiconductor materials and the instruments and test procedures used in experiments.2.The voltage characteristics of In Ga As/Ga As/In Ga P quantum well lasers at different temperatures are studied and a theoretical model is established to describe them.By comparing the experimental values and theoretical simulation values of the developed laser,it is found that their I-V curves have the same variation trend at different temperatures,and the voltage and temperature coefficients(d V/d T)are approximately linear.It shows that the established theoretical model has high adaptability to the laser.The voltage and temperature coefficients of the laser in the range of 100-300K are 2.93-3.17m V/K and 3.91-4.15m V/K,respectively,according to experimental test and theoretical model calculation.The voltage temperature coefficients obtained by the two are close within 100-300K,indicating that the established theoretical model can better simulate the temperature and voltage characteristics of the laser in this temperature range.3.The electrical characteristics of In Ga As/Ga As/In Ga P quantum well lasers and Ga Sb-based quantum well lasers are studied.Through the analysis of the I-V curves of the two lasers,several factors that affect the differential resistance of the laser are obtained.The increase of the ridge width reduces the differential resistance of the laser.The increase of cavity length reduces the differential resistance of the laser.As it becomes larger,the differential resistance of the laser becomes smaller.Among the Ga Sb-based quantum well lasers developed,the lowest power consumption of the device is 15.60m W.Among the In Ga As/Ga As/In Ga P quantum well lasers,the lowest power consumption of the device is 6.57m W.Because with the decrease of the laser's power consumption,the thermal effect and the the impact on the low temperature environment will also decrease.Therefore,the In Ga As/Ga As/In Ga P quantum well laser with the lowest power consumption is used to study the modulation characteristics of the next step.4.The I-V characteristics,I-P characteristics,power consumption characteristics and high-frequency modulation characteristics of In Ga As/Ga As/In Ga P quantum well lasers with a cavity length of 0.5mm and a ridge width of 3?m after fiber coupling and packaging are studied.The transmission network composed of current source,network analyzer,Bias-T bias device and detector is used to test the high frequency modulation characteristics of the laser.Through the analysis of room temperature and low temperature test data,respectively,the forward transmission coefficient S₂₁diagram of the transmission network under the two conditions is obtained,and it is concluded that the modulation rate of the laser at low temperature is indeed higher than that at room temperature.And it is preliminarily judged that the high frequency modulation bandwidth of the laser at low temperature is close to 6.5GHz.The research results show that the developed In Ga As/Ga As/In Ga P quantum well laser has certain potential in realizing the application of data communication between low temperature and room temperature.