Triboelectric Potential Tuned Dual-gate A-IGZO Transistor For Versatile Sensory Device

With the development of The Internet of Things（Io T）era and 5G Network,the Internet of Things is inseparable from the Internet.Based on the 5G Network,The Internet of Things has realized the connection between things and everything.On the other hand,The Internet of Things needs a huge variety of sensors in the perception layer,and the signals from these sensors are read by the subsequent network construction layer.Sophisticated intelligent interactive system calls for energy-efficient strategy to multifunctional versatile sensory devices.Since the invention of triboelectric nanogenerator（TENG）,coupling the triboelectric potential and semiconductor device have opened up a new research field,which named tribotronics.Here,we present a device-level versatile sensory platform based on triboelectric potential tuned dual-gate a-IGZO transistors with a common bottom gate and an air-dielectric top gate,which can be used as multifunctional sensors（including distance/pressure/optical sensor and artificial photonic synapse）.As the existence of oxygen-deficiency-related persistent photocurrent characteristics in a-IGZO channel,versatile transistor device is also facile to imitate the biological synaptic behaviors by light pulse.Assisted with synergistic triboelectric potential modulation,the updated synaptic weights can be readily used for image edge detection.The main work content is as follows:First,it built a multifunctional sensing platform which was based on the triboelectric potential modulating the dual-gate amorphous indium gallium zinc oxide（a-IGZO）transistor.The dual-gate a-IGZO transistor consists a common bottom gate and an air-dielectric top gate which can be used as a multifunctional sensor（including distance/pressure/optical sensor and artificial photonic synapses）.We understood the basic electrical properties of the amorphous indium gallium zinc oxide transistor.When the bottom gate modulated the transistor from-10 V to60 V,the current on/off ratio is 1.7×10⁶and the threshold voltage is 0 V.When the top gate modulated the transistor from-100 V to 100 V,the current on/off ratio is 1×10³and the threshold voltage is 25 V.Through the double-gate structure,the effect of capacitive coupling on the device is discussed.Second,the multifunctional sensor of tribotronic dual-gate a-IGZO transistor is studied.It explains the working principle of tribotronic dual-gate a-IGZO.The multifunctional transistor device can be easily driven by triboelectric potential,and as a highly sensitive range sensor related to mechanical displacement.When the displacement distance range is-0.04to 0.14 mm,the sensitivity is 2.05×10⁵mm^-1 and when the displacement is 0.16 mm to 0.3 mm,the sensitivity is 1.57×10⁶mm^-1.With the tribotronic potential generated by TENG is used to modulate the transistor and the capacitance change caused by the air gate medium of the top gate under the action of external pressure,it forms the pressure sensor.the pressure applied on the top gate from 55.5Kpa to 344.4Kpa,The response time is 120 ms.It explains the working mechanism of the intrinsic photoconductivity of the tribotronic amorphous indium gallium zinc oxide（a-IGZO）.It forms the light sensor.The optical sensing at 465nm is realized,and the optical response is 10⁵ A/W.Third,the device is also easy to simulate biological synaptic behavior through light pulses due to the persistent photocurrent properties associated with oxygen vacancies in amorphous indium gallium zinc oxide（a-IGZO）.The device is also easy to simulate biological synaptic behavior by light pulses under the modulation of cooperative triboelectric potential,and can be easily used for image edge detection by updating synaptic weights.With the help of cooperative frictional potential modulation,updating synaptic weights can be easily used for image edge detection.In this paper,it prepared dual-gate triboelectronics devices and tested and characterized various sensing signals.This device has great potential in image recognition processing and neuromorphic chip of multifunctional intelligent sensing human-computer interaction wearable intelligent electronic devices...