Research On The Damage Mechanism Of 28nm FDSOI Single Particle Irradiation Based On Geant4

The development of electronic devices has always had a huge impact on our daily life and the progress of the country’s military development,among which aerospace electronic devices are the key influencing factors.However,there are a considerable number of particles and space rays in the space environment,and the normal operation of electronic devices will be affected by them.When space particles bombard and enter the device,they will react with the target material and cause the single event effect.However,SOI devices have the advantages that bulk silicon devices do not have: they can avoid the parasitic latchup effect of the device.This type of device also has smaller parasitic capacitance,faster circuit speed,higher integration density,and insignificant Advantages such as short channel effect.The main research results of this article are divided into three parts:The first part: based on Geant4 Monte Carlo simulation tool to study the energy deposition effects of different particles and materials.The LET curve generated by 28 nm parallelepiped sensitive body under different incident energy,particle type,target material doping concentration,particle incident angle,and target material type are explored.At the same time,the scattering,nuclear reaction and secondary generation caused by particle incidence are also studied.The total amount,type and energy of first-class particles.Through Geant4 simulation,it is found that when the incident energy increases,the LET value produced by the particle presents a different trend.If the incident particle is a proton,the LET first increases,then decreases,and then increases again;at the same time,when the incident is an Alpha particle,the LET value shows a different trend.Increase and decrease;the incidence of Beta particles decreases exponentially;when the incidence is Gamma particles,the deposition dose is 0,that is,almost directly through the device.When the incident particle is a heavy ion,the LET value will produce a double extreme value.Both extreme values increase with the increase of incident energy.At the same time,the first extreme value increases faster than the second extreme value;at the same time,when heavy ion atoms are incident When the ordinal number is greater than 232,a nuclear reaction will occur,which increases the LET value generated by low incident energy.At the same time,the target material type,target material doping concentration,particle incident direction,incident position range,etc.are also studied.The second part: the study of the single event effect of a single device.In this chapter,four different 3D devices,including RVT NMOS devices,RVT PMOS devices,LVT NMOS devices and LVT PMOS devices,have been established and calibrated using sentaurus TCAD.There are the following conclusions:(1)Compared with the LVT device,the RVT device has a higher SET pulse peak value and charge accumulation effect;(2)Among the four devices,the on-state RVT NMOS device has the relatively most obvious charge collection effect;(3)The charge collection effect of the off-state RVT NMOS device is slightly less than that of the on-state RVT PMOS device,and its value is about 76%.The third part: Based on the Sentaurus Divice module,build the SRAM test circuit of bulk silicon and FDSOI devices,and then use bulk silicon and FDSOI devices in 11 different positions in the width range of-114 nm ～ 114 nm,and 4 different depths in the height range of 28 nm to 326 nm.The threshold LET value that causes the SRAM to flip.Then,based on the results,a model of Geant4 bulk silicon and FDSOI devices with composite sensitive bodies was established,and different particles were randomly incident on 1000 particles with different incident energies.Based on the Monte Carlo principle and critical flipped charge,two devices were obtained.Flip cross section and weighted average deposition energy distribution at the incident position.There are conclusions:(1)FDSOI devices have the same flip cross section as bulk silicon when the incident particle energy is lower;but when the incident particle energy is higher,the FDSOI device has a smaller sensitive area and therefore has better radiation resistance.Therefore,the threshold energy is as low as onetenth when the bulk silicon reaches the same flipped cross section;(2)Protons and Alpha particles also produce a certain cross section when the initial energy of 0.01 MeV ～ 100 MeV is incident;(3)When the incident particles are heavy ions,Due to the increase in atomic number,the flip cross section generated when the incident energy is higher is also increased accordingly;(4)The device thickness is 1mm,10 mm,and 100 mm shielding layer shows that the 10 mm layer can block heavy ions with incident energy below 106 MeV,so SRAM does not flip,and a 100 mm shielding layer can make SRAM not flip at all from 10-4MeV to 107MeV.