Research On The Modeling And Predicting Surface Roughness SiC Monocrystal Wafer By Diamond Wire-Sawing

Surface roughness is one of the quality characteristics of SiC monocrystal wafer in diamond wire-sawing;its quality will affect the electronic device’s performance and life.Therefore,this thesis studied the modeling,simulation of SiC monocrystal wafer’s surface roughness and optimization of parameters based on the diamond wire saw cutting process.We analysis the SiC monocrystal wafer diamond wire saw cutting mechanism,write a material removal rate model,discussing the wire speed and wire wear particle’s effective on material removal rate,and introduce the equipment and experiment principle briefly.From the geometric point of view,we give the surface roughness prediction method,regard the grit protrusion height as Gauss distribution,and regard the abrasive wear as truncated from a height of normal distribution,on the basis of processing time slice surface abrasive cutting traces of the slice surface roughness prediction model.From the angle of mathematical expectation,give a predict formula of surface roughness in the diamond wire sawing grinding process,establishes the predictive model under the joint action of multiparticles.In this paper,using the Taguchi experimental design method,regarding the surface roughness of SiC monocrystal wafer as the quality characteristics in diamond wire sawing process,we choose the orthogonal table L₂₇to run the experiment to determine the optimal process parameters according to the ratio of SN.Secondly,we obtain a better result by using artificial neural network for the prediction of surface roughness of SiC monocrystal wafer.