Research On Key Process Optimization And Biochemical Detection Of Silicon Nanowire Sensors

Sensor technology is the key technology of modern information and the forerunner of intelligent technology.It is applied to various fields of social development and human life,such as environmental monitoring and biomedicine.Among them,silicon nanowire field effect transistor sensors have short detection time,high sensitivity and label-free detection capabilities in the detection of proteins,nucleotide sequences,viruses and biochemical reactions.The silicon nanowire field effect transistor sensor is compatible with the existing CMOS technology and micro-nano processing,can prepare high-density sensor arrays,and can reduce usage and multiplexing.Although the nanowire field effect transistor sensor is expected to become a transformative diagnostic technology,there are still many problems to be solved in the actual application of the device.This article focuses on the key process optimization and biochemical detection applications of silicon nanowire sensors.Process optimization includes designing silicon nanowires with supporting structures,heavy source and drain doping,and resistive metal silicides.And use the optimized device to perform ion sensing detection on solutions of different p H.At the same time,the preparation and application of low-cost,low-temperature annealing process polysilicon nanowire sensors for monolithic 3D integrated circuit applications are explored.The main research content and results of this article are as follows:1.The silicon nanowire array and silicon nanowire sensor with supporting structure are prepared by the method of combining the spaced image transfer technology(SIT)technology and ordinary optical lithography.The prepared silicon nanowire array has uniformity,and the verticality of the formed nanowire sidewall is greater than 89o.By heavily doping the source and drain regions of the silicon nanowire sensor and using nickel platinum metal silicide technology,the parasitic resistance of the silicon nanowire sensor is reduced by 282 times,and the consistency of the prepared sensor is further improved.2.Research the application of silicon nanowire sensor for ion detection of p H solution.The p H solution dropped on the surface of the grid and the bias voltage are applied to detect the sensor's ion-sensing characteristics.The results show that the sensor has the characteristics of fast and high sensitivity,and the sensitivity is about162 m V/p H.The biochemical detection of the kidney disease marker Cys-C by the silicon nanowire sensor was studied.The electrical performance test showed that the sensor realized the real-time,highly sensitive and specific detection of the kidney disease markers.3.The process is optimized for the challenge of applying silicon nanowire sensors to three-dimensional integrated circuits.The polysilicon nanowire sensor is prepared by low-temperature annealing process,and the maximum temperature is600?,which meets the temperature that three-dimensional integrated circuits can withstand;while using polysilicon to prepare the sensor can greatly reduce the manufacturing cost and lay a good foundation for future mold production.The polycrystalline silicon nanowire sensor prepared by this method has similar characteristics to the SOI device,and the sensing sensitivity is about 178 m V/p H.