Field Effect Rectifier Based On ZnPc/MoS₂ Hybrid Structure And Its Performance

Rectifier is a device which transforms AC signal into DC signal.It has important applications in logic circuit,power transmission and other fields.At present,the rectifier used in the market is mainly realized by silicon-based PN junction diode,while the field effect rectifier uses the gate to modulate the channel material to realize the rectification characteristics.Compared with the common PN junction rectifier,it has lower turn-on voltage and higher breakdown voltage,and has more advantages in power integrated circuit.In the current research,the field effect rectifier is mainly based on the two-dimensional electron gas constructed in Al Ga N/Ga N material,and the cost is still high.Because of its natural ultra-thin structure and high carrier mobility,the two-dimensional material is suitable for modulating the carriers via the field effect,thus realizing the field effect rectification function.As well,modulating the doping of the channel is meaningful for inproving the switching property of the field effect rectifier.Therefore,two-dimensional MoS₂is used as the channel material,and ZnPc(zinc phthalocyanine)is used as the depletion layer to fabricate the field effect rectifier based on ZnPc/MoS₂transistor.The main research contents and conclusions are as follows:1.ZnPc/MoS₂ heterostructure transistor was prepared by using ZnPc as depletion layer of exfoliated MoS₂.It is found that the device has a fixed-direction rectification characteristics.By comparing the output characteristics of the device when the gate is grounded and ungrounded,it is confirmed that the rectification property of the device comes from the relative potential difference between the gate and the drain.ZnPc modification makes MoS₂channel depleted and the rectification performance greatly improved,up to 10⁵.The schottky barrier between MoS₂and electrode is about 38.2 me V,which makes the field effect rectifier show a low turn-on voltage(-1.1 V).2.The frequency dependence of the rectification performance of the ZnPc/MoS₂transistor is further studied.It is found that the switching ratio of the rectifier has obvious frequency dependence.With the increase of frequency,the rectification ratio decreases gradually,which can be explained by the charge filling effect caused by the defect state in the MoS₂channel and the device.Under±5 V alternating voltage,the rectification ratio of?100 can still be maintained at 5 k Hz.Then,the study uses the gate as the input and the drain current as the output to realize the inverter(logic non)function based on the switching effect of the field effect rectifier.It is proved that this type 2D field effect rectifier has good potential in the construction of logic electronic devices.