Study Of The Resistive Switching Of The NSTO Based NiO And Noble Metal Heterostructures

Resistive Random Access Memory（RRAM）which bases on Resistive Switching（RS）effect are of advantages of high density,high velocity and low power consumption,showing important and vast perspective application.Many kind of materials exhibit RS effect with various properties and mechanisms.In this paper,Ni O,Pt,Au and Ag are fabricated on Nb:Sr Ti O₃（NSTO）single crystals to form their heterostructures.The RS effects,photovoltaics and magnetism of these heterostructures as well as their mechanisms are studied.In this paper,Ni O thin films were prepared on Nb:Sr Ti O₃（NSTO）to fabricate Pt/Ni O/NSTO heterojunction devices.The results showed that the devices have typical bipolar resistive switching,multilevel memory and excellent retention and endurance performances.And the light illumination could significantly reduce the resistance in HRS of the device.Simultaneously,the devices had higher saturation magnetization in LRS.The result of RS effect and magnetic modulation can be attributed to the electrons trapping/detrapping and oxygen vacancy migration at the Ni O/NSTO interface,and the photoresponse of devices can be attributed to the generation of electron hole pairs and the migration of photogenerated electrons.The devices have application potentials in non-volatile multilevel storage,photosensitive,magnetoelectronic and other multi-functional devices.Besides,simple RS devices such as Pt/NSTO,Ag/NSTO,Au/NSTO were fabricated by magnetron sputtering.On this basis,the RS devices of Pt/NSTO with different thickness of Pt layer were further fabricated.These devices all showed typical bipolar resistive switching,multilevel memory and excellent retention and endurance performances.At the same time,obvious photoresponse was also shown.The difference of RS effect of each device is analyzed and compared.The optimum thickness of Pt layer was obtained by optimization.The result of RS effect can be attributed to the change of Schottky barrier and the electrons trapping/detrapping at the Metal/NSTO interface,and the photoresponse of devices can be attributed to the photoelectron migration stimulated by interface traps.