| A Co0.032Zn0.97O(CZO)thin film was epitaxially grown on a Nb doped(001)SrTiO3(NSTO)single-crystal substrate by pulsed laser deposition to form a Pt/CZO/NSTO heterostructure.This device exhibits excellent resistive switching and the coupling of photoresponse and magnetism modulation.Experimental results show that the Pt/CZO/NSTO heterostructure is a typical bipolar resistive switching device with well retention and endurance,multilevel memories which could be used for multi-modal storage.Under the illumination of 405 nm laser,the high resistive state(HRS)of the device showed distinct photoelectricity with open-circuit voltage of 0.5 V,and the resistance of HRS reduce 100 times,but the illumination has no effect on the low resistive state(LRS)of the devices.Through the magnetic test,a stronger ferromagnetism was observed at the HRS than at the LRS,and the anneal time could modulate the ferromagnetism of the devices.This indicate that the ferromagnetism of the devices is related to the concentration of oxygen vacancy.The comprehensive analysis shows that the above phenomenon is attributable to the accumulation and migration of oxygen vacancies at the interface of CZO/NSTO.Our results demonstrated a pathway towards making multifunctional devices that simultaneously exhibit resistive switching,photoelectricity,and ferromagnetism. |
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