Research On Technology Of Terahertz Detector Based On Suspended Structure

As one of the most noticeable frontier technologies,terahertz technology has broad application prospects in the fields of national defense,aerospace,medicine,communications,food,and environment.As one of the core components of the terahertz system,the development of terahertz detectors also faces more challenges and opportunities.Room temperature terahertz detectors have the advantages of small size,compact structure,low cost,and ability to work at room temperature,and are currently the main research direction of terahertz detectors.The microbolometer detects terahertz waves by converting terahertz radiation into heat through the thermal effect of thermal materials.It is currently the mainstream room temperature terahertz detector with room temperature operation,broadband detection,real-time imaging,easy array integration,and compact size.,High sensitivity and other advantages.The selection of high-performance thermal film,the design of low thermal conductivity structures and the design of high-efficiency electromagnetic coupling structures have always been the key research directions of microbolometers.This paper studies the fabrication process of a microbolometer with a large-area suspended micro-bridge,the structure design,processing technology and performance characterization of the Nb₅N₆terahertz detector based on MEMS technology.The main research results are as follows:First,by exploring and using new etching mask materials,step-by-step etching,dry etching and wet etching,and other new MEMS processes,a 60μm×30μm large-area suspension bridge Nb₅N₆terahertz detection has been realized The preparation of the device provides a process reference for the preparation of various suspended structures in the laboratory.At the same time,it provides process reference for the preparation of larger-scale terahertz array detectors.Second,by designing metal superstructure arrays to enhance the absorption of specific wavelengths,and using electron beam lithography to realize the preparation of 60μm×30μm Nb₅N₆suspension bridge structures with integrated metal microstructure arrays,in order to prepare various suspended microstructures.The high-performance detectors provide technical support.