Research On Preparation Process Of Micro-channel Ge-Sb-Se Chalcogenide Optical Waveguide Device

Information and communication technology is entering the era of informationization and intelligence.It has developed rapidly in the past ten years,and people have higher and higher requirements for the transmission performance of various information product carriers.Integrated photonic devices have played a very important role in the development of information and communication technology.Among them,integrated photonic devices have attracted much attention because of their excellent characteristics such as high bandwidth,fast transmission speed,small size,low power consumption,and good compatibility.Chalcogenide glass materials are often used as ideal materials for ultra-fast optical integrated units due to their high linear and non-linear characteristics,ultra-fast nonlinear response time,and the absence of carrier absorption.At the same time,the processing of sulfur-based waveguides is compatible with mature semiconductor fabrication technologies,and it is possible to flexibly integrate on-chip photovoltaic devices.This is also an important basis for studying the progress of sulfur-based optical waveguides.At present,the preparation of sulfur-based optical waveguides mainly includes dry etching,wet etching,stripping,and hot stamping,but the preparation process is not mature enough,and many preparation processes are still in the exploration stage.The prepared waveguide has rough sidewalls.The problems such as high degree and high transmission loss limit its application.Therefore,the preparation of high-performance and low-loss sulfur-based waveguides is of great significance for the development of optical communications.In this paper,the Ge₂₈Sb₁₂Se₆₀ glass is used as the target material,and the Ge₂₈Sb₁₂Se₆₀ thin film is obtained by thermal evaporation technology,and the quality of the thin film is tested.Based on this,micro-channels were obtained on the SiO₂ substrate by photolithography and etching techniques.Ge₂₈Sb₁₂Se₆₀ waveguides were prepared by thermal evaporation coating and lift-off methods,and the surface morphology and transmission characteristics of the waveguides were tested..The main research contents are as follows:The first chapter gives a brief overview of optical waveguide devices.Then,the characteristics of sulfur-based materials and the conventional methods for preparing sulfur-based optical waveguides are introduced.The applications,development status,and significance of this topic's research topics are summarized.The second chapter summarizes the transmission theory of optical waveguides and related numerical analysis calculations.Simultaneously,simulation and analysis are performed on micro-channel Ge₂₈Sb₁₂Se₆₀waveguides of different sizes using simulation software.The results of the simulation provide a later stage for the preparation of channel-type optical waveguides.Important reference.The third chapter mainly studies the preparation of optical waveguides using microchannel filling and stripping methods,including etching SiO₂ channels,sulfur-based film deposition,and stripping of residual adhesive.The fourth chapter mainly studies the properties of Ge₂₈Sb₁₂Se₆₀ film,including film quality analysis and non-linear testing.Micro-channel Ge-Sb-Se optical waveguides have low surface roughness(about 1.5 nm).At 1550 nm,the transmission losses of the 3×1.0?m² and 5×1.0 um² waveguides are 2.2±0.36 dB/cm and 1.7±0.24dB/cm.In addition,the nonlinear refractive index n₂ of the Ge₂₈Sb₁₂Se₆₀ chalcogenide film obtained by Z-scan technology is 6.74×10^-15 m²/W,the two-photon absorption?is 3.04×10^-8 m/W,and the third-order nonlinear polarizability()is2.67×10^-14 esu.The test results show that the Ge₂₈Sb₁₂Se₆₀ thin film has good nonlinear performance.The channel waveguide can meet the requirements of photonic devices with high nonlinearity and low transmission loss.The fifth chapter summarizes the content of this thesis,and points out the problems in our research work and the research directions in the future.