| In recent years, there has been great research interest in the development of efficient Group III-Nitride Light Emitting Diodes (LEDs) due to the range of wavelengths covered by this material family. Quantum wells play a significant role in the performance of these optoelectronic devices as they enable tuning in emission wavelength and color of light through variation in composition and width of the well.;The time and cost associated with iterative development and optimization of such new semiconductor devices through physical materials growth and device fabrication can be prohibitive to full exploration of potential design spaces. Technology Computer Aided Design (TCAD) simulation tools have emerged allowing engineers to explore design alternatives at an early stage. However simulations, especially for new materials and devices exhibiting quantum effects, must reliably model material and device physics and produce results that correspond to those that would have been achieved experimentally. In this thesis, tiberCAD, Crosslight APSYS and Synopsys tools have been evaluated and used to design and analyze components of, as well as complete Multiple Quantum Well LEDs. The effect of variations of mole fraction, well width, and bias on Energy Levels and Electroluminescence (EL) has been examined. Simulation results have been compared with theory and measurements from grown and fabricated GaN/InGaN Multiple Quantum Well LEDs. |
