This thesis outlines the development and experimental evaluation of a particular variety of short-pulse, high-peak-power, laser sources. Semiconductor-saturable-absorber modelocking, involving the use of a saturable-absorbing quantum-well embedded in a high reflecting mirror, is applied to two laser systems with contrasting gain characteristics: chromium-doped YAG, a low-gain laser material, and sodium-chloride, a high-gain color-center laser material. In addition, a new SBR device, grown with a novel wafer-bonding technique is designed and demonstrated. Pulse durations, ranging from 200 fs--2 ps, at various telecommunications wavelengths, in the range 1.3--1.6 mum, are produced. |