| This thesis describes the design and fabrication of two components of an optical receiver: a novel silicon photodetector and a novel silicon amplifier circuit. Interdigitated metal-semiconductor-metal (MSM) photodetectors were fabricated by depositing metal contacts on top of a 2 μm layer of polycrystalline silicon (polysilicon). These detectors have a −3 dB bandwidth of 750 MHz and a responsivity of 0.13 A/W at 860 nm. The bandwidth is more than twice that reported for conventional silicon MSM photodetectors as a result of the thin absorbing layer made possible by the higher optical absorption of polysilicon. A simple fabrication process that is compatible with standard VLSI processes, together with good performance characteristics, make this an ideal detector for integrated optoelectronic receivers for use in short distance, parallel optical data links. As well, a 1 x 16 amplifier array fabricated in silicon bipolar technology is described with application for parallel optical data links. The amplifiers are limiting amplifiers of the transimpedance-transadmittance type, and were designed for low power consumption. Measured results for operation at 622 Mbit/s are given. |
