Modeling polarization and growth of gallium nitride/silicon structures

Wide band gap materials have been a focal point for research in electronics as well as optics. GaN in particular has shown great promise for use in high power and high frequency devices. The electronics field has a great interest in the internal polarization fields that are produced with stress as well as spontaneously polarization fields. This thesis addresses the mathematical representation of these fields as well as the growth of GaN onto Si substrates. This model can predict the strain caused by the growth parameters of GaN and the subsequent polarization fields that are produced. This thesis also addresses the equipment needed for fabrication of the proposed GaN/Si structures. Focus is laid on the use of RF plasma assisted molecular beam epitaxy. The thesis shows the use of these models as well as proposes a low power GaN field effect transistor device.