| The topic of this thesis is to discuss the performances and the applications of electronic devices fabricated using emerging technologies, in the context of high performances communication systems. Microwave measurement setups (of low-frequency, S-parameters, large-signal, and noise characteristics) and modeling techniques (of S-parameters, nonlinear current source, and noise performances) have been implemented in order to investigate in a systematic manner three emerging technologies. The GaN-based and the SOI-based technologies are studied in the perspective that the use of newer semiconductors, with better intrinsic properties than the conventional materials used in microelectronics (Si, GaAs), results in an improvement of the devices performances, and therefore in better communication modules. In addition to this aspect, the three dimensional microwave monolithic integrated circuits (3D-MMIC) integration technique, using the Intervia(TM)8000 dielectric material, improve the integration level. From an application perspective, GaN-based field effect transistors target high power, low noise and high temperature microwave applications. The SOI and the Intervia(TM)8000 technologies represent an alternative or a complement to the Si-CMOS technology in C-band. |
