Advancements in scanning probe lithography and nanostructure fabrication

This thesis is divided into three sections: (1) lithography techniques and development of a novel scanning probe lithography (SPL) system, (2) development of micro-machining technology for probe array fabrication, and (3) development of a localized carbon nanotube synthesis technique for integrating nanotube devices.; The two predominant methods of scanning probe lithography (SPL) are electric-field enhanced oxide pattern formation and resist exposure by field emitted electrons. Using the first method, one of the first functional electron devices (100 nm gate-length n-MOSFET) was fabricated using SPL and their electrical characteristics are presented. The limitations, such as slow scan-speeds and tip wear are addressed. An improved SPL system, which incorporates simultaneous force and current feedback to expose electron sensitive films, is demonstrated. The performance of this “Hybrid AFM/STM lithography system,” including resolution, overlay accuracy, critical dimension control, tip-wear, scan speed and its ability to pattern over underlying topography, is discussed. A 100 nm gate-length pMOSFET was fabricated using this system and its electrical performance was measured.; To increase the throughput of an SPL system, an array of scanning probes must operate in parallel. Previously, the operation of a one-dimensional linear array was demonstrated. To extend the probe array into two dimensions, micro-machining technology was developed for fabricating high-wiring density, through-wafer vias (TWV). The integration of the TWV with scanning probe arrays and an application of TWV to create novel three-dimensional integrated inductors on silicon is discussed.; Carbon nanotubes possess many electrical properties that make them a possible candidate material for novel molecular electronic devices. In this work, chemical vapor deposition (CVD) synthesis of high-yield, defect free, single-walled nanotubes (SWNTs) with controlled location is presented. In addition, we describe a fabrication technique to create low resistance contacts to the SWNTs, and report on their electrical characteristics. Finally, we describe a processing technique for vertically aligned synthesis of nanotubes, which may enable us to integrate them on to the tip of a scanning probe.