Pattern-Integrated Interference Lithography: Single-exposure formation of photonic-crystal lattices with integrated functional elements

The primary objective of the research presented in this thesis is to demonstrate a new lithographic method, Pattern-Integrated Interference Lithography (PIIL) [72-76]. PIIL is the integration of superposed pattern imaging with IL. The result is a complex optical-intensity distribution composed of an MBI-defined periodic lattice modified by an integrated mask pattern image to form functional elements. To demonstrate the PIIL method, a Pattern-Integrated Interference Exposure System (PIIES) is presented that incorporates a projection imaging capability in a novel three-beam interference configuration. The purpose of this system is to fabricate, in a single-exposure step, a two-dimensional periodic photonic-crystal lattice with non-periodic functional elements integrated into the periodic pattern.;In the design of the PIIES configuration, a complete understanding of MBI patterning possibilities is required. While previous research has described the full range of translational and space-group symmetries, missing from the literature are general studies of the individual motif geometries within the unit cell of an interference pattern. This need is addressed in the present research with accurate motif geometry models for the 2D plane-group symmetries possible via linearly-polarized three-beam interference [77,78], optimized for maximum absolute contrast and primitive-lattice-vector direction equal contrast [58]. These new models provide additional insight into MBI patterning possibilities, enable more precise analysis of MBI lattice properties for a wide range of applications, and facilitate simplified algorithms to determine the beam parameters required for the design of specific motif geometries.;In the optimized design of the specific space-group symmetries and motif geometries, most research assumes individual control over beam amplitudes and polarizations. Given the limitations of most MBI configurations this is not always possible. Without the ability to condition the key parameters of each interfering beam, it is not clear that full patterning capability remains. Furthermore, even if a particular plane-group symmetry or motif geometry is possible, it is not clear that sufficient contrast is possible for optical lithography purposes. The research presented here provides the missing analysis of constrained parametric optimization for both square and hexagonal translational symmetries [77,79]. A straightforward methodology is presented to facilitate a thorough analysis of effects of parametric constraints on interference-pattern symmetries, motif geometries, and their absolute contrasts.;With a complete understanding of MBI patterning possibilities and considerations, including the effects of parametric constraints, the design of the basic PIIES configuration is presented along with a model that simulates the resulting optical-intensity distribution at the system sample plane where the three beams simultaneously interfere and integrate a superposed image of the projected mask pattern. Appropriate performance metrics are defined in order to quantify the characteristics of the resulting photonic-crystal structure. These intensity and lattice-vector metrics differ markedly from the metrics used to evaluate traditional photolithographic imaging systems.;Simulation and experimental results are presented that demonstrate the fabrication of example photonic-crystal structures in a single-exposure step. These well-defined structures exhibit favorable intensity and lattice-vector metrics, demonstrating the potential of PIIL for fabricating dense integrated optical circuits.;Beyond the fabrication of photonic crystal structures as demonstrated in the current research, PIIL has the potential to provide a new lithographic method to allow the semiconductor industry to continue meet Moore's law predictions, while finding additional applications in an increasing variety of micro- and nano-technology fields. (Abstract shortened by UMI.).