| The wide band gap semiconductor GaN doped with rare earths is of great interest in electronic and optoelectronic applications, because of its capability for emission in the visible and infrared spectrum when photostimulated. The study of these materials allows expansion of applications of light emitting devices, solid-state lasers, flat panels, optic detectors and optical storage devices. This semiconductor has been broadly investigated and fabricated with the use of various techniques such as Metal Organic Molecular Beam Epitaxy (MOMBE), Chemical Vapor Deposition (CVD), and Molecular Beam Epitaxy (MBE), and doped in situ by evaporation of the doping material or ex situ by ion implantation. The technique used in this research was Pulsed Laser Deposition (PLD) and materials were doped in situ with the use of a thermal evaporator.; It was possible to dope GaN with Er and Pr obtaining thin films with good crystal quality and surface morphology, and with uniform granular distribution. A series of thin films using different fluxes of doping material were grown, in order to find adequate parameter for photoluminescence of the rare earth on these materials. The optical properties of these thin films were studied by photoluminescence spectroscopy, but it was not possible to observe luminescence by the dopants.; Thin films of GaN by PLD with a GaN were grown buffer and without the use of a buffer and these were compared by means of results of the optical microscope, X ray diffraction (XRD), atomic force microscope (AFM) and photo spectroscopy, showing very similar characteristics. |
