This thesis focuses on the optimization of the design of the top metal electrode of a vertical GaN light emitting diode (LED) via extensive simulation. Vertical LEDs show superior reliability over lateral device and exhibit minimal degradation of optical power under high currents. At first, the mathematical modeling of current spreading in the LED device is developed. The potential distribution is calculated at various nodes in the current spreading layer using Finite Difference Method (FDM). Then, the top metal electrode is designed in such a way that it ensures uniform current spreading. The analytical and simulation results obtained using the MATLAB software package show improved reliability of vertical LEDs compared to alternate LEDs while minimizing the optical power degradation. |