| Lanthanum based gate oxides have been under research for the past few years targeting high-K gate dielectric applications. We deposited thin lanthanum based oxides and nano-laminate structures using lanthanum oxide, aluminum oxide and hafnium oxide with both water and ozone as the oxidant using atomic layer deposition (ALD) on p-type silicon substrates. The resulting films achieved EOT below 1.5nm maintaining low leakage current densities (<1x10 -5A/cm2) and high thermal stability (up to 950°C). Various surface and physical characteristics of the gate oxides were also evaluated using characterization methods such as TEM, XPS, XRD, SIMS and RBS. This research was sponsored by Rohm and Haas Electronic Materials, LLC who also provided the lanthanum precursor for the ALD process. |
