| Extreme Ultraviolet Lithography (EUVL) is based on a complex system including source, reflective masks, and reflective imaging optics. As a simple and inexpensive alternative, we study the use of a transmissive mask to replace all the complex optical system with diffraction optics.;In this thesis, we review several diffraction theories, including Fresnel-Kirchhoff, Rayleigh-Sommerfeld, and the Beam Propagation Method. They are then applied to develop several models of EUV lithography (Interferometric Lithography, Holographic Lithography, and Talbot imaging system). We also included partial coherence effects in all the EUV lithography applications, and compared the modeling with the experimental results. Thus, a complete set of physical models of the image formation in EUV is developed, and applied to the optimization of a lithographic system, suitable for the nanoscale patterning at 20 nm, and below. |
