| The purpose of this work is to evaluate the structure, and optical, electrical and magnetic properties of thin films of CuAlO2 and CuAlO 2 doped with Mn and Fe grown sapphire substrate with (0001) orientation. For this work CuAl1--xMn xO2 with (x = 0:02 and 0:05), CuAl1--xFe xO2 with (x = 0:05 0:1, 0:2 and 0:3), CuO, Fe2O3 and Mn5O8 targets were prepared, with which thin films were grown by pulsed laser deposition (PLD) from the sintered targets and multilayer technique. The characterization and comparison of resulting films were made by multiple techniques. Its structure was analyzed by x-ray diffraction (XRD) using CuKalpha radiation, while showed that the thin films grow in a epitaxial arrangement with respect to the sapphire (0001) substrate. Values between 0.0391 and 0.0906 S cm -1 were measurement for the conductivity of samples of CuAl1-- xFexO2 with concentrations between 5 and 30% atomic of Fe, using the van der Pauw technique. Samples doped with Mn were not measured due to their high resistivity. Measurements of transmittance and absorbance a band gap of 3.58 eV was obtained, and samples had a high transmittance, in spite of the high content of Fe in the thin films. The thin films grown with the multilayer technique show good conductivity, but poor surface morphology and poor optical quality. The study of the surface morphology of Fe-doped thin films show an increase in the grain size and roughness with increasing concentration of Fe. Finally, measurements of magnetic properties yielded an overall diamagnetic behavior, overlapping with a small diamagnetic component in the case of 10% atomic Fe and decreasing with increasing Fe concentration. |
