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SiO2 Deposited In LED Chips Is Used To Study The Control Mechanism Of PV Film Technology

Posted on:2020-06-30Degree:MasterType:Thesis
Country:ChinaCandidate:Z D YaoFull Text:PDF
GTID:2438330575451832Subject:Control engineering
Abstract/Summary:PDF Full Text Request
With the rapid development of semicon ductor technology,SiO2 deposition method has become the forefront and focus of researching of thin film science.And it has been applied in the fields of electronic,machinery,LED,biomedicine,aviation,communication,etc.PECVD technology is the simplest and most efficient way to prepare SiO2 thin film,and the film has a lot of advantages.But in the production thin film,varieties of factors impact it,including RF power,cavity temperature,pressure,etc.It significantly affects the uniformity and quality of thin film.Based on the study background,current conditions,aim and significance,by SiO2 property and principle,combined with production problems encountered by the company,we contrastively analy film structure properties in the production,and propose a method to solvethe problem of compactness decreases and short life.We select Oxford PECVD(800Plus)to product SiO2 thin film,so the experimental parameters can be controlled in real time,including RF power,cavity temperature,pressure,etc.By optimizing and controlling the parameter,we found that reducing RF power can slow down the SiO2 thin film deposition speed and the chemical etching rate can be improved,so the uniformity of thin film can become better.Testing and controlling the cavity temperature and pressure,the system can achieve the expected and stable function.We selecting the SiH4 and N2O as experimental material and grow the thin film on the sapphire substrate.Experimental results show that,to get the SiO2 thin film of thickness 800±5A and refractive index 1.5±0.5,RF power should be selected 100W,cavity pressure should be selected 500mTorr,temperature should be selected 250? and gas flow ratio should be selected 100:10.So we can reduce the SiO2 thin film depositonrate to be 5?10A/s and chemical etching rate to beless than 10A/s.The experimental results have some referenced value for corrosion resistance,oxidation resistance of SiO2 thin film.The high quality film can effectively protect product and guarantee a long service life,improving the core competence of the corporation.The advanced production technology of SiO2 thin film can be rapidly applied in the same trade and improve the level and quality of over all industry.
Keywords/Search Tags:LED, Sapphire, Chemical Vapor Deposition, Control optimization, Passivation film
PDF Full Text Request
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