The Sol-gel Method Was Used To Prepare The SiO₂-based Dust-repellent Film On The Glass Surface

Tin dioxide（SnO₂）is a kind of n-type semiconductor material with double ionized oxygen vacancies.It has good photoelectric performance,good stability,low cost,environmental protection and other characteristics.It is used in anti-static film,transparent conductive electrode,thermal insulation film,gas sensor and so on.In this paper,based on the application of anti-static film on glass,the preparation,structure and properties of glass surface SiO₂-based dust-removing film were studied.In this paper,SnO₂-SiO₂film,ATO-SiO₂ film and SiO₂/ATO-SiO₂ bilayer film were prepared by sol-gel dipping.Using a series of characterization methods,such as X-ray diffractometer（XRD）,scanning electron microscopy（SEM）,Fourier transform infrared spectroscopy（FTIR）,X-ray photoelectron spectroscopy（XPS）,atomic force microscopy（AFM）,ultraviolet visible near infrared spectrophotometer（UV-VIS-NIR）,Hall effect instrument and falling dust experiment.The effects of Sn/Si molar ratio on the structure and properties of SnO₂-SiO₂film,the effects of Sb doping on the structure and properties of SnO₂-SiO₂film,and the effects of SiO₂ layer on the structure and properties of ATO-SiO₂ film were studied.The main findings are as follows:（1）The effects of Sn/Si molar ratio on the structure and properties of SnO₂-SiO₂film.Pure SiO₂ film was an amorphous structure,and SnO₂-SiO₂ film was a tetragonal rutile structure.With the increase of Sn/Si molar ratio,the crystallinity of the SnO₂-SiO₂ sample improved and the average grain size increased.The square resistance continued to decrease.The transmittance decreased first,then increased and then decreased.The dust-removing performance was basically increasing,with good dust-removing effect,the best was 50%.Comprehensive consideration,the SnO₂-SiO₂ film with a Sn/Si molar ratio of 1.50 was selected.（2）The effects of Sb doping on the structure and properties of SnO₂-SiO₂film.Sb doping didn’t change the crystal phase of the SnO₂-SiO₂ sample,and it still was a tetragonal rutile structure,and no new phases were formed.With the increase of the Sb doping concentration,the particle size of the ATO-SiO₂ film decreased first,then increased,and then decreased slightly.The transmittance decreased.The square resistance decreased first and then increased.The dust-removing effect enhanced first and then decreased,which was better than that of SnO₂-SiO₂ film.When the Sb doping concentration was 12 mol%,the square resistance was the smallest,4.64×10⁶W/□,and the dust-removing effect was the best,reaching 64%.（3）The effects of the SiO₂ layer on the structure and properties of the ATO-SiO₂ film.The three-dimensional surface morphology of the SiO₂/ATO-SiO₂bilayer film was affected by the SiO₂ base layer and grew in a columnar structure.The transmittance and the dust-removing effect were better than single layer ATO-SiO₂ film.With the increase of SiO₂ basic catalyst,the roughness of SiO₂/ATO-SiO₂ film increased significantly.The square resistance decreased first and then increased.The transmittance increased first and then decreased.The B-2/ATO-SiO₂ film had the smallest square resistance,the best dust-removing performance,and the highest transmittance,which was 86.952%.