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Preparation And Performance Study Of Sb2S3 Thin Film Materials Based On Low-temperature Plasma Synthesis

Posted on:2021-05-19Degree:MasterType:Thesis
Country:ChinaCandidate:Y X OuFull Text:PDF
GTID:2431330611958969Subject:Non-ferrous metallurgy
Abstract/Summary:PDF Full Text Request
In recent years,antimony sulfide?Sb2S3?has been regarded as one of the most promising alternative materials for absorption layer of traditional thin-film solar cells due to its excellent electrical and optical properties.In this paper,Sb2S3thin films were prepared by traditional two-temperature heating,plasma sulfur atmosphere and plasma at low temperature.The new innovation results are as follows:Sb2S3thin films were successfully prepared by the traditional two-temperature zone heating method,and the influence of curing temperature on the physicochemical properties and photoelectrical properties of the films was studied.The minimum temperature at the antimony end of Sb2S3 thin films was 350?by the traditional two-temperature zone heating method.And the films prepared at 350?and 400?have along<151>the characteristics of selective growth in the direction of the crystal surface.Sb2S3thin films were successfully prepared by plasma sulfur atmosphere.The effects of curing temperature,rf power and curing time on the chemical composition,morphology,phase and photoelectric properties of the films were studied.The results show that Sb2S3thin films can be prepared by plasma sulfur atmosphere at low temperature.At the rf power of 183W,Sb2S3thin films with S/Sb atom ratio close to theoretical value,pure phase,large particle size and uniform distribution can be prepared at 300?.<211>and<221>the phenomenon of excellent growth in the direction of crystal plane.The low temperature plasma method was also used to prepare Sb2S3thin films.The effects of rf power and plasma action time on the chemical composition,morphology and phase of thin films were studied.The results showed that the sulfur content was positively correlated with rf power or plasma action time,and the surface particle size of the film increased first and then decreased.Under the condition of rf power of 180 W and the temperature of the reaction zone of about 200?,Sb2S3can be prepared with relatively good surface morphology,suitable film composition and good crystallinity,and presented along<211>direction preferred growth is more significant.Sb2S3thin film was prepared by three methods based on vacuum environment.According to the experimental data,plasma participation can reduce the reaction temperature and form the film at a lower temperature.The film quality is better than that of the two-temperature zone heating method.The low temperature plasma method is better than the plasma sulfur atmosphere method.
Keywords/Search Tags:Magnetron sputtering, Sb2S3thin film, CVD, Thin film preparation, Plasma film making
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