Experimental Study On The Interface Thermal Resistance Of Two Heterojunction Systems

With the integration of modern electronic devices,a large amount of heat will be generated during operation and the accumulation of heat will affect the life and stability of electronic devices.Therefore,heat dissipation has become a crucial part in electronic devices.Different materials will produce an interface when they come into contact with each other,which will hinder the heat flow.So the study of interfacial heat transfer,becomes particularly important.In this paper,we studied the interfacial thermal resistance of two heterogeneous systems experimentally.The 3-omega method is adopted in our study due to its relatively simple operation,excellent performance and wide temperature range.First of all,the framework of the measurement system is presented,including the Lock-in Amplifier,6221 AC current source,an external circuit box,Labview data collection system and vacuum temperature controller.In order to reduce the influence of the external environment temperature,we connected the temperature control device with the measuring system providing high vacuum and constant temperature environment to ensure the stability of the measurement.After setting up the measurement system,we have verified the reliability and stability of the system by measuring the thermal'conductivity of bulk silicon and silicon dioxide thin films.The results we obtained are comparable with those reported in literature within the allowable error.Therefore,we believe that our measurement system is stable for further studies.First,we studied the thermal resistance of non-metal/non-metal interfaces based on our measurement system which is the silicon dioxide/silicon heterojunction interface,Then we studied the thermal resistance of metal/non-metal interfaces which is the copper/silicon heterojunction interface.The value of interfacial thermal resistance is 2.002 × 10-8m2KW-1 for silicon dioxide/silicon using 3-omega methods.In order to explore the influence of temperature on the interfacial thermal resistance of silicon dioxide/silicon,this structure was placed in a vacuum temperature control instrument.And we found that the interfacial therlal resistance decreased with the increase of temperature in the range of 100K-300K.For the interface thermal resistance of copper/silicon structure,it is found that the interface thermal resistance will decrease with the increase of pressure.The reason is that the interface is rough relatively.With the increase of pressure,the gap between interfaces is compressed and the contact area is increased,resulting in a decrease of interface thermal resistance.And then,we filled molybdenum disulfide as a thermal interface material between copper and silicon to study the changes in the interfacial thermal resistance.We found that filling the interfacial thermal material will increase the thermal resistance of the interface,which can be explained by the series of thermal resistances.