Research On 808nm High Power Semiconductor Laser Chip

Semiconductor lasers are widely used in laser pumping,advanced manufacturing,fiber optic communication,and data storage due to their small size,light weight,low threshold current,high electro-optical conversion efficiency,and the ability to pump current.,scientific research and medical beauty and other fields.The 808nm high power semiconductor laser is the ideal pump source for all solid state lasers(Nd:YAG).With the continuous development of laser technology,its requirements for semiconductor laser pump sources are also getting higher and higher,mainly in the following aspects:(1)to improve its optical power in continuous or quasi-continuous operation mode,to meet the increasing Increased power demand;(2)Improve electro-optical conversion efficiency,reduce power consumption and volume of laser system and save cost;(3)Improve beam quality to meet fiber coupling application requirements;(4)Improve reliability and working life In order to cope with the harsh working environment;therefore,this paper mainly focuses on the high power and high efficiency of 808nm semiconductor laser,and studies the basic principle,preparation process and test analysis of 808nm semiconductor laser chip.The main research contents are as follows:1.This paper briefly introduces the development status,basic principles and advantages of semiconductor lasers.The research status and application fields of 808nm high power semiconductor lasers at home and abroad are introduced.2.Introduced the basic characteristics of semiconductor lasers,including threshold current density,output power,electro-optical conversion efficiency,internal quantum efficiency,internal loss,cavity surface reflectivity and other parameters.The main factors affecting the output power of semiconductor lasers are also analyzed,and the mechanism of COMD occurrence is described.This paper introduces the basic preparation process of 808nm semiconductor laser chip,such as epitaxial growth,chip cleavage coating,chip packaging,and focuses on the coating process of 808nm semiconductor laser chip.This paper adopts a special cavity surface treatment technology.The high output power of the 808nm semiconductor laser device is realized.The quasi-continuous(100us/10Hz)output power of 1cm 808n bar exceeds 1017W,and the optical catastrophic damage of the end face does not occur,reaching the international first-class level.Based on the above special cavity surface treatment technology,semiconductor laser single-tube chips with cavity lengths of 2mm,4mm and strip widths of 96?m,150?m and 190?m were prepared by epitaxy,photolithography,etching,deposition and other processes.,have achieved good test performance results.5.Independently built a high-power semiconductor laser test and analysis platform,conducted power and current characteristics test and spectrum test.The microchannel cooling(MCC)packaged bar device has a pulse width of 400us,a repetition rate of 200Hz,a peak power of 804.88W,a threshold current of 27.7A,and a slope efficiency of 1.14W/A in quasi-continuous operation mode(QCW).The COMD has a center wavelength of 814.67 nm and a spectral half-width FWHM of 4.16 nm.The microchannel cooling(MCC)packaged bar device has a maximum power of 106 W in continuous operation mode(CW),a threshold current of 14.89 A,a slope efficiency of 1.42 W/A,a center wavelength of 809.42 nm,and a FWHM of 1.71 nm.