The Characteristics Study Of High Power Semiconductor Lasers’ Package With Different Structure Materials

High-power semiconductor laser packaging technology is an integral part of the laser preparation process.Its packaging quality will directly affect the output power,beam quality,reliability,and working life and other performance parameters of the laser.Therefore,choosing the right packaging material will improve the package quality.Its output power,solving heat dissipation and other issues have played a pivotal role.This dissertation combines the research of semiconductor laser packaging technology,theoretical analysis of packaging technology,selection of reasonable heat sink materials,design of ideal heat sink structure,determination of solder thickness and metal layer material,optimization of welding process,and theoretical analysis of welding effect.Selecting the material whose expansion coefficient meets the test,and packaging the device by vacuum reflow and other processes,a semiconductor laser with low thermal resistance,high power,and high stability is prepared.In this experiment,four kinds of semiconductor lasers with different structure materials of 808 nm were prepared.By the simulation and relevant tests,the basic performance parameters of these four kinds of lasers were compared,the near field and far field characteristics were compared,the stability was compared,and the thermal characteristics were compared.A high power semiconductor laser package structure with good stability,high reliability,and strong applicability was selected.