Effect Of Graphene Intercalation On Characteristics Of Ag/quartz/Pt Selector

With the rapid development of information technology,Resistive Random Access Memory(RRAM)has become a strong competitor for the next generation of memory due to its advantages of high density,large capacity,fast speed and low power consumption.From the perspective of process and integration density,passive cross array is the best solution to achieve high density storage of RRAM,but the crosstalk problem caused by leakage current in the array cannot be underestimated.For this reason,researchers have proposed a variety of solutions to solve the crosstalk problem.Among them,using a selector in series with RRAM to suppress leakage current is considered to be the most economical solution.The key parameter to characterize the performance of the selector is the nonlinearity(NL).In this paper,First-principles research methods are used to explore the effects of a complete graphene(GR)monolayer and three defective GR monolayer on the nonlinearity of the Ag/quartz/Pt selector.The First-principles calculation method was used to study the effect of GR intercalation on the characteristics of Ag/quartz/Pt selector.First of all,through the calculation of surface energy and binding energy,the thickness of the quartz(001)slab model,the interface distance and interface configuration of each interface are confirmed,subsequently,Ag(111)/quartz(001)and Ag(111)/GR/quartz(001)interface are constructed,the simulation results show that the insertion of GR monolayer makes the transport of carriers between interfaces more difficult,the charge transfer between interfaces less,the dielectric reliability and conductivity of quartz significantly improved.Finally,Ag/quartz/Pt and Ag/GR/quartz/Pt selector are built,the simulation results show that the insertion of GR monolayer reduces the off state current and improves the driving current of the selector,eventually leads to the the device's NL improved.Based on the intact GR,the defective GR models of large hole,medium hole,and small hole are fabricated,and the influence of these three defective GR on the performance of Ag/GR/quartz/Pt type selector are studied.Firstly,based on the previous research,three types of defective GR based Ag(111)/GR/quartz(001)interface models are established.Theresearch on the three types of interfaces found that the larger the GR defective hole,the larger the barrier of the interface,and the larger the area where electron transfer occurs,the better the conductivity of the quartz layer.Secondly,three Ag/GR/quartz/Pt selector models with GR defect are built.The calculation results of the First principle show that the larger the GR defective hole,the lower the off-state current of selector and the higher the driving current of selector(the result is that the NL of selector is higher),especially the NL of the Ag/GR/quartz/Pt selector with the large hole defective GR is improved by an order of magnitude compared with the intact Ag/GR/quartz/Pt selector.In summary,comparing the electrical characteristics of the Ag/GR/quartz/Pt and the Ag/quartz/Pt selector,it can be seen that the perfect GR monolayer significantly improves the performance of the Ag/quartz/Pt selector.The research on Ag/GR/quartz/Pt selector with three different GR defects found that the larger the GR defect hole,the better the performance of the Ag/GR/quartz/Pt selector.This work may be instructive and valuable for the design and optimization of Ag/quartz/Pt selectors.